AffRegion.i
Repository
Accueil
Racine
Repository
Accueil
Racine

Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « État de New York »
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Émilie-Romagne < État de New York < État de Washington  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 335.
[20-40] [0 - 20][0 - 50][40-60]
Ident.Authors (with country if any)Title
00BD22 (2003-12-15) Time-resolved spectroscopy of recombination and relaxation dynamics in InN
00BE47 (2003-11-03) Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping
00BE54 (2003-11-01) Measurement of extreme-ultraviolet attenuation edges of magnesium, tin, and indium filters
00BE87 (2003-10-27) Growth of cubic InN on r-plane sapphire
00BE91 (2003-10-15) Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure
00BF08 (2003-10-15) Emitter injection efficiency and base transport factor in InAs bipolar transistors
00BF22 (2003-10-06) Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer
00BF29 (2003-10-01) Temperature dependence of the fundamental band gap of InN
00BF34 (2003-10-01) InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
00BF94 (2003-09-08) High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers
00C041 (2003-08-25) Experimental study of the optical gain and loss in InAs/GaInSb interband cascade lasers
00C048 (2003-08-18) Monolithically series-interconnected GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic devices with an internal backsurface reflector formed by wafer bonding
00C085 (2003-08-15) Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
00C097 (2003-08-11) Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
00C118 (2003-08-01) Misfit dislocation interactions observed by cathodoluminescence in InGaAs on off-cut, patterned GaAs
00C150 (2003-07-28) 1.47-1.49-μm InGaAsP/InP diode laser arrays
00C253 (2003-06-23) Exciton and carrier motion in quaternary AlInGaN
00C309 (2003-06-01) Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
00C335 (2003-05-26) Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes
00C465 (2003-04-15) Ultrafast differential transmission spectroscopy of excitonic transitions in InGaN/GaN multiple quantum wells
00C547 (2003-03-17) Surface charge accumulation of InN films grown by molecular-beam epitaxy

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